GLS29EE010-70-4C-EHE
特性
•单电压读写操作
- 4.5-5.5V用于GLS29EE010
•卓越的可靠性
-续航:100,000次(典型)
—数据保留时间大于100年
•低功耗
-有效电流:20ma(典型)5V和
10ma(典型)2.7V
—待机电流:10µA(典型)
•快速写页操作
- 128字节每页,1024页
-写页周期:5毫秒(典型)
完成内存重写:5秒(典型)
-有效写字节周期时间:39µs(典型)
•快速读访问时间
- 4.5-5.5V工作:70和90ns
- 2.7-3.6V工作:150和200 ns
•锁存地址和数据
•自动写定时
-内部VPP生成
•写检测结束
-开关位
-数据#轮询
•硬件和软件数据保护
•产品标识可通过以下方式访问
软件操作
•TTL I/O兼容性
•JEDEC标准
- Flash EEPROM引脚和命令集
•可用的软件包
- 32导联plc
- 32导联TSOP (8mm × 14mm, 8mm × 20mm)
- 32针PDIP
•所有非pb(无铅)设备都符合RoHS标准
GLS29EE010-70-4C-EHE
FEATURES:
• Single Voltage Read and Write Operations
– 4.5-5.5V for GLS29EE010
• Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
• Low Power Consumption
– Active Current: 20 mA (typical) for 5V and
10 mA (typical) for 2.7V
– Standby Current: 10 µA (typical)
• Fast Page-Write Operation
– 128 Bytes per Page, 1024 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
• Fast Read Access Time
– 4.5-5.5V operation: 70 and 90 ns
– 2.7-3.6V operation: 150 and 200 ns
• Latched Address and Data
• Automatic Write Timing
– Internal VPP Generation
• End of Write Detection
– Toggle Bit
– Data# Polling
• Hardware and Software Data Protection
• Product Identification can be accessed via
Software Operation
• TTL I/O Compatibility
• JEDEC Standard
– Flash EEPROM Pinouts and command sets
• Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm, 8mm x 20mm)
– 32-pin PDIP
• All non-Pb (lead-free) devices are RoHS compliant